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Studies of the Etching of Si, SiO2 and Mo by Carbon Fluorine Compounds Using Real Time Auger Spectroscopy

Published online by Cambridge University Press:  21 February 2011

D. Thomson  and
C. R. Helms
D. Thomson
Affiliation:
Stanford Electronics Laboratories Stanford University Stanford, California 94305
C. R. Helms
Affiliation:
Stanford Electronics Laboratories Stanford University Stanford, California 94305
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Abstract

The ion etching of Si, SiO2 and Mo by fluorocarbon ions was studied using real time Auger electron spectroscopy. The carbon in the CF3+ ions was found to react rapidly with SiO2 to form volatile products, resulting in a very low carbon concentration on the SiO2 surface. Both Si and Mo formed carbides when bombarded with CF3+ ions. This resulted in a high carbon concentration on these surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 155
Copyright
Copyright © Materials Research Society 1985

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References

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