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Studies of the Effects of Ion-Implantation and Electron Beam Irradiation on CuInSe2 Single Crystals

Published online by Cambridge University Press:  26 February 2011

C. A. Mullan ,
C. J. Kiely ,
A. Rockett ,
M. Imanieh ,
M. V. Yakushev  and
R. D. Tomlinson
C. A. Mullan
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
C. J. Kiely
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
A. Rockett
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
M. Imanieh
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
M. V. Yakushev
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
R. D. Tomlinson
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, England.
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Abstract

A series of CuInSe2 single crystals which were grown by the vertical Bridgman technique have been implanted with oxygen and xenon ions. These implants tend to cause a change from n to p-type conductivity and an enhancement of the photoconductivity. We present HREM and SIMS characterisation of the microstructural effects caused by high dose ion implants on CuInSe2. We also correlate our data with calculated ion implant profiles. In addition, we show that CuInSe2 thin foils can undergo significant degradation under the electron beam irradiation conditions which are commonly encountered in electron microscopes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1097
Copyright
Copyright © Materials Research Society 1992

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References

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