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Studies of the Effects of Ion-Implantation and Electron Beam Irradiation on CuInSe2 Single Crystals
Published online by Cambridge University Press: 26 February 2011
Abstract
A series of CuInSe2 single crystals which were grown by the vertical Bridgman technique have been implanted with oxygen and xenon ions. These implants tend to cause a change from n to p-type conductivity and an enhancement of the photoconductivity. We present HREM and SIMS characterisation of the microstructural effects caused by high dose ion implants on CuInSe2. We also correlate our data with calculated ion implant profiles. In addition, we show that CuInSe2 thin foils can undergo significant degradation under the electron beam irradiation conditions which are commonly encountered in electron microscopes.
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- Copyright © Materials Research Society 1992
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