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Studies of Crystalunity for Sputter Deposited Bi-Based Oxide Films

Published online by Cambridge University Press:  26 February 2011

Koichi Mizuno ,
Yo Ichikawa  and
Kentaro Setsune
Koichi Mizuno
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570, Japan
Yo Ichikawa
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570, Japan
Kentaro Setsune
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570, Japan
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Abstract

Crystalline quality of Bi-based oxide films has been evaluated by means of X-ray diffraction (XRD) and ion-channeling on the Rutherford backscattering (RBS). The films were sputter deposited 2201-phase Bi2Sr2Cu1O8-δ (BSCO) and 2212-phase Bi2Sr2Ca1Cu2O8-δ (BSCCO). They were prepared on MgO(100) and SrTiO3(100) substrates at the low temperature of 650°C during the deposition. The best quality, however thin films had poor crystallinity compared to single crystals, was obtained with the 2201-phase BSCO film that was deposited on a SrTiO3(100) substrate. The full width at half maximum (FWHM) value of the rocking curve on XRD for the film was estimated as 1560 (arc sec).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 901
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Mizuno, K., Higashino, H., Setsune, K. and Wsa, K., Appl. Phys. Lett. 56, 1469 (1990).Google Scholar
2. Mizuno, K. and Setsune, K., Jap. J. Appl. Phys. 30, L1559 (1991).Google Scholar
3. Bando, Y., Kijima, T., Kitami, Y., Tanaka, J., Izumi, F. and Yokoyama, M., Jap. J. Appl. Phys. 27, L358 (1988).Google Scholar
4. Matsui, Y., Tanaka, S., Nozaki, H., Umezono, A., Takayama-Muromachi, E. and Horiuchi, S., Jap. J. Appl. Phys. 27, L1241 (1988).Google Scholar
5. Raistrick, I. D., Hawley, M., Beery, J. G., Garzon, F. H. and Houlton, R. J., Appl. Phys. Lett. 59, 3177 (1991).Google Scholar