Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T17:48:33.969Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure-Property Relationships of Tin Dioxide Thin Films Grown on Sapphire Substrates by Femtosecond Pulsed Laser Deposition

Published online by Cambridge University Press:  21 March 2011

J. E. Dominguez ,
L. Fu  and
X. Q. Pan
J. E. Dominguez
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 49109
L. Fu
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 49109
X. Q. Pan
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 49109
Get access

Abstract

The sensitivity of semiconductive tin dioxide (SnO2) to reducing gases is determinedby the electrical conductivity change in the material. This change in conductivity strongly dependson the thickness of the electron depletion layer near the oxide film surface. In this paper we study the effect of crystal defects and interfaces on the electrical properties and the gas sensing performance of SnO2 thin films. SnO2 thin films with the thickness varying from 15 nm to 100 nm were deposited on sapphire substrates with different surface crystallographic orientations by femtosecond pulsed laser deposition. Films grown on the (1012) sapphire (R-cut) are epitaxial, single crystal. High resolution transmission electron microscopy studies showed the existence of a large number of crystal defects including crystallographic shear planes and misfit dislocations at the film/substrate interface. Films grown on the (0001) sapphire substrates (Ccut) are nanocrystalline with (200) texture. The gas sensitivity of the films was measuredin a gas reactor at high temperature. It was found that the sensitivity to reducing gases increases with decreasing film thickness. Electrical transport properties of the SnO2 thin films were investigated byHall effect measurements. Models correlating the microstructures of thin films to electrical properties are proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA7.7.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tuller, H. L., Current Opinion in Solid State and Materials Science, 3, 501 (1998)Google Scholar
2. Williams, D. E., Solid State Gas Sensors, edited by Moseley, P.T. and Tofield, B. C., Hilger, A. (IOP, Bristol, 1987) pp. 71–123 Google Scholar
3. Rickerby, D.G., Horrillo, M.C., Santosa, J.P. and Serrini, P.,Nanostructured Materials, 9, 43 (1997)Google Scholar
4. Kazmerski, L. L., Polycrystalline and Amorphous Thin Films and Devices ed. Kazmerski, L.L. (Academic Press, New York, 1980) pp. 59–133 Google Scholar
5. Zheng, J.G., Pan, X., Schweizer, M., Weimar, U., Gopel, W. and Ruhle, M., J. Mat. Sci., 31, 2317 (1996)Google Scholar
6. Mulheran, P. A. and Harding, J.H., Modelling Simul. Mater. Sci. Eng., 1, 39 (1992)Google Scholar
7. Hotsenpiller, P. A. Morris, Bolt, J. D., Farneth, W. E. Lowekamp, J.B. and Rohrer, G.S., J. Phys. Chem. B., 102, 3216 (1998)Google Scholar