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Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

Published online by Cambridge University Press:  10 February 2011

K. F. Chan ,
X.-A. Zhao  and
C. W. Ong
K. F. Chan
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong, People's Republic of China
X.-A. Zhao
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong, People's Republic of China
C. W. Ong
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong, People's Republic of China
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Abstract

CNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 498: Symposium AA – Covalently Bonded Disordered Thin-Film Materials , 1997 , 295
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Liu, A.Y. and Cohen, M.L., Phys. Rev. B 41, 10727 (1990).Google Scholar
2. Marton, D., Boyd, K.J., Al-Bayati, A.H., Todorov, S.S. and Rabalais, J.W., Phys. Rev. Lett. 73, 118(1994).Google Scholar
3. Ren, Z.M., Du, Y.C., Qui, Y.X., Wu, J.D., Ying, Z.F., Xiong, X.X. and Li, F.M., Phys. Rev. B 51, 5274 (1995).Google Scholar
4. Niu, C., Lu, Y.Z. and Lieber, C.M., Science 261, 334 (1993).Google Scholar
5. Kumar, S. and Tansley, T.L., Thin Solid films 256, 44 (1995).Google Scholar
6. Taue, J., in Amorphous and Liquid Semiconductors, Plenum Press, London, 1974, p. 175.Google Scholar
7. Nakayama, N., Tsuchiya, Y., Tamada, S., Kosuge, K., Nagata, S., Takahiro, K. and Yamaguchi, S., Jpn. J. Appl. Phys. 32, L1465 (1993).Google Scholar
8. Socrates, G., in Infrared Characteristic Group Frequencies, John Wiley & Sons, Chichester, 1980, p. 18.Google Scholar
9. Socrates, G., in Infrared Characteristic Group Frequencies, John Wiley & Sons, Chichester, 1980, p. 36.Google Scholar
10. Hammer, P., Baker, M.A., Lenardi, C. and Gissler, W., J. Vac. Sci. Technol. A 15, 107 (1997).Google Scholar