Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T15:15:39.459Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure of Perturbed Twin Boundaries in Silicon

Published online by Cambridge University Press:  22 February 2011

Anita Garg ,
W. A. T. Clark  and
J. P. Hirth
Anita Garg
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
W. A. T. Clark
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
J. P. Hirth
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
Get access

Abstract

Silicon bicrystals containing Σ =3(60°/[111]1,2) twin boundaries have been fabricated by sintering together single crystal (IMi) :vafers (which deviated from the exact (111) by upto ±4′). Transmission electron microscopic investigation revealed the boundaries to be near-twin boundaries having a superposed tilt component. The grain boundary dislocation structure of these boundaries has been studied in a transmission electron microscope (TEM) and interpreted as arising from the interaction of a large tilt component with a smaller twist component, to give the observed low energy configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 101
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schober, T. and Balluffi, R.W., Phil. Mag., 20 (1970), 109.Google Scholar
2. Föll, H. and Ast, D., Phil. Mag. 40 (1979), 589.Google Scholar
3. Carter, C.B., Foil, H., Ast, D.G. and Sass, S.L., Phil. Mag. 43 (1981), 441.Google Scholar
4. Bollmann, W., Crystal Defects and Crystalline Interfaces, (Springer-Verlag, New York, 1970).Google Scholar
5. Heilmann, P., Clark, W.A.T. and Rigney, D.A., Ultramicroscopy 9 (1982), 365.Google Scholar