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The Structure of Ion-Implanted Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

J. M. Gibson ,
J-Y. Cheng ,
P. Voyles ,
M.M.J. TREACY  and
D.C. Jacobson
J. M. Gibson
Affiliation:
University of Illinois, Department of Physics, 1110 W. Green St, Urbana, IL 61801
J-Y. Cheng
Affiliation:
University of Illinois, Department of Physics, 1110 W. Green St, Urbana, IL 61801
P. Voyles
Affiliation:
University of Illinois, Department of Physics, 1110 W. Green St, Urbana, IL 61801
M.M.J. TREACY
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton NJ 08540
D.C. Jacobson
Affiliation:
Lucent Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
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Abstract

Using fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 27
Copyright
Copyright © Materials Research Society 1999

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References

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