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Structure of Interfaces in Multilayers

Published online by Cambridge University Press:  10 February 2011

A. I. Fedorenko ,
Yu.P. Pershin ,
O. V. Poltseva ,
A. G. Ponomarenko ,
D. L. Voronov  and
S. A. Yulin
A. I. Fedorenko
Affiliation:
Polytechnic University, Department of Metal and Semiconductor Physics, Kharkiv, 310002, Ukraine, [email protected]
Yu.P. Pershin
Affiliation:
Polytechnic University, Department of Metal and Semiconductor Physics, Kharkiv, 310002, Ukraine, [email protected]
O. V. Poltseva
Affiliation:
Polytechnic University, Department of Metal and Semiconductor Physics, Kharkiv, 310002, Ukraine, [email protected]
A. G. Ponomarenko
Affiliation:
Polytechnic University, Department of Metal and Semiconductor Physics, Kharkiv, 310002, Ukraine, [email protected]
D. L. Voronov
Affiliation:
Polytechnic University, Department of Metal and Semiconductor Physics, Kharkiv, 310002, Ukraine, [email protected]
S. A. Yulin
Affiliation:
Polytechnic University, Department of Metal and Semiconductor Physics, Kharkiv, 310002, Ukraine, [email protected]
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Abstract

Structure of interfaces in as-deposited state and after annealling at elevated temperatures was studied in variety of dc-magnetron sputtered multilayers by X-ray diffraction and high resolution electron microscopy. Interfaces in multilayers from materials without phase equilibrium (Mo/Si, W/Si, MO/B4C, Cr/C, Mo/(B+C)) are unstable and has the trend to evolution due to interlayer redistribution of chemical elements. Formation of the extended intermixed transition zones at interfaces is characteristic for multilayers from materials without phase equilibrium with each other. Unhomogeneous structure of materials along and across layers is responsible for nonuni-form proceeding of layer intermixing, development of interface roughness and differences of neighbour interfaces. It was shown that thickness asymmetry of intermixed transition zones at Mo/Si and Si/Mo interfaces in large-period Mo/Si multilayers is caused by different mechanisms of growth of Mo and Si on each other and by different structure of lower and upper parts of polycrystalline Mo-layers. Interfaces in multilayers from materials with phase equilibrium MoSi2/Si, WSi2/Si, OB2/C, TiC/C, Ni/C, MO2B5/B4C) are sharp and stable at elevated temperatures which gives the possibility to treat them for modification of their structure (smoothening, restoring sharp profiles of chemical elements). Multilayers W/Ti and W/TiN showed trend to formation of epitaxial superlattices with coherent or partially coherent (with misfit dislocations) interfaces and pseudomorphic state of layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 458: Symposium W – Interfacial Engineering for Optimized Properties , 1996 , 249
Copyright
Copyright © Materials Research Society 1997

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References

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