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The Structure of GaAs Grown by Chemical Beam Epitaxy on Low-Temperature Cleaned Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
Chemical beam epitaxy (CBE) has been used to grow GaAs on silicon with a low defect density after etching in HF followed by a low temperature (600°C) in situ heat treatment. High resolution electron microscopy (HREM) and convergent beam electron diffraction (CBED) studies show the presence of 90° and 60° dislocations and some inversion domains.
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- Copyright © Materials Research Society 1993