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Structure of Amorphous Semiconductor Interfaces Determined from in Situ Optical Reflectivity Measurements

Published online by Cambridge University Press:  26 February 2011

L. Yang  and
B. Abeles
L. Yang
Affiliation:
Exxon Research and Engineering Company, Route 22 East, Annandale, NJ 08801
B. Abeles
Affiliation:
Exxon Research and Engineering Company, Route 22 East, Annandale, NJ 08801
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Abstract

The optical reflectivity at 6328Å of a-Si:H, a-Ge:H, a-Si:H/a-SiNx:H and a-Si :H/a-SiOx:H interfaces can be explained by a model of chemically abrupt interfaces that are macroscopica!ly rough on a scale of 10–20Å.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 641
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Yang, L., Abeles, B., and Persans, P. D., Appl. Phys. Lett. 49, 631 (1986)Google Scholar
2. Eberhardt, W., Abeles, B., Yang, L., Stasiewski, H., and Sondericker, D., same volume.Google Scholar
3. Collins, R. W. and Pawsowski, A., J. of Appl. Phys. 59 (4), 1160 (1986)Google Scholar
4. Antoine, A. M. and DreviHon, B., Proceedings of 18th Int. Conf. on Physics of Semiconductors, Stockholm (1986)Google Scholar
5. Abeles, B., Yang, L., Eberhardt, W., Proceedings of Int. Workshop on Amorphous Semiconductors, Beijing (1986)Google Scholar