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Structure Evolution in Plated Cu Films

Published online by Cambridge University Press:  01 February 2011

D.P. Field ,
NJ Park ,
PR Besser  and
JE Sanchez
D.P. Field
Affiliation:
School of Mech.and Matls. Eng, Washington State University, Pullman, WA 99164-2920 USA
NJ Park
Affiliation:
School of Mech.and Matls. Eng, Washington State University, Pullman, WA 99164-2920 USA Kumoh National Institute of Technology, Gumi, Gyungbuk, 730-701 Korea
PR Besser
Affiliation:
Advanced Micro Devices, Sunnyvale, CA 94088-3453 USA
JE Sanchez
Affiliation:
Unity Semiconductor, Sunnyvale, CA 94085 USA
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Abstract

Structure evolution in plated Cu films is a function of sublayer stacking, film thickness, plating chemistry, plating parameters, and temperature. The present work examines grain growth and texture evolution in annealed plated Cu on a 25 nm thick Ta sublayer for films of 480 and 750 nm in thickness. These results are compared against those obtained from damascene Cu lines fabricated from a similar process, using a series of line widths. The results show that the initial structures of the plated films are similar, with slightly weaker (111) texture, a higher fraction of twin boundaries, and larger grains in the thicker films. The microstructure of the Cu within the trench constraints is a strong function of line geometry with the propensity for twin boundary development controlling structural evolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B5.2
Copyright
Copyright © Materials Research Society 2005

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