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Structure, Electrical and Magnetic Properties of Thin Films of La1−xMxMnO3 on Si

Published online by Cambridge University Press:  10 February 2011

N. N. Mateeva ,
P. C. Hogan  and
K. H. Dahmen
N. N. Mateeva
Affiliation:
Department of Chemistry/MARTECH, Florida State University, Tallahassee, FL 32306
P. C. Hogan
Affiliation:
Department of Chemistry/MARTECH, Florida State University, Tallahassee, FL 32306
K. H. Dahmen
Affiliation:
Department of Chemistry/MARTECH, Florida State University, Tallahassee, FL 32306
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Abstract

Thin films of lanthanum manganates doped with Ca2+, Sr2+, Ba2+ and Pb2+ have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La0.8Al0.2O3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 562: Symposium L – Polycrystalline Metal & Magnetic Thin Films , 1999 , 51
Copyright
Copyright © Materials Research Society 1999

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References

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