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Structure and Properties of Polysilsesquioxanes and Copolymers for Ultra-Low Dielectric Films

Published online by Cambridge University Press:  01 February 2011

Do Y. Yoon ,
Hyun Wook Ro ,
Eun Su Park ,
Jin-Kyu Lee ,
Hie-Joon Kim ,
Kookheon Char ,
Hee-Woo Rhee ,
Dongil Kwon  and
David W. Gidley
Do Y. Yoon
Affiliation:
School of Chemistry, Seoul National University, Seoul 151-742, KOREA.
Hyun Wook Ro
Affiliation:
School of Chemistry, Seoul National University, Seoul 151-742, KOREA.
Eun Su Park
Affiliation:
School of Chemistry, Seoul National University, Seoul 151-742, KOREA.
Jin-Kyu Lee
Affiliation:
School of Chemistry, Seoul National University, Seoul 151-742, KOREA.
Hie-Joon Kim
Affiliation:
School of Chemistry, Seoul National University, Seoul 151-742, KOREA.
Kookheon Char
Affiliation:
School of Chemical Engineering, Seoul National University, Seoul 151-742, KOREA.
Hee-Woo Rhee
Affiliation:
Department of Chemical Engineering, Sogang University, Seoul 121-742, KOREA.
Dongil Kwon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea.
David W. Gidley
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109.
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Abstract

Polysilsesquioxanes (PSSQs) with the empirical formula (RSiO3/2)n have become very important as low-dielectric insulators for copper interconnects in the next-generation logic devices, but the detailed structure-property relationships were completely lacking. We have investigated the microstructure and functional properties of PSSQs with varying alkyl substituents and also PSSQ copolymers. As a result, significant advances have been made in the scientific understanding of PSSQ structures and significant improvements of key properties such as the crack resistance, mechanical modulus and hardness, and incorporation of nanometer-sized (<4 nm) porosity for ultra-low dielectric constants (<2.0).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E6.5
Copyright
Copyright © Materials Research Society 2003

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References

1.International Technology Roadmap for Semiconductors, 2002 edition.Google Scholar
2. Nguyen, C.V., Carter, K. R., Hawker, C. J., Hedrick, J. L., Jaffe, R. L., Miller, R.D., Remenar, J. F., Rhee, H.W., Rice, P.M., Toney, M. F., Trollsas, M., and Yoon, D. Y., Chem. Mater. 11, 3080 (1999).Google Scholar
3. Yang, S., Mirau, P., Pai, C.S., Nalamasu, O., Reichmanis, E., Pai, J. C., Obeng, Y. S., Seputro, J., Lin, E. K., Lee, H.J., Sun, J., and Gidley, D.W., Chem. Mater. 14, 369 (2002).Google Scholar
4. Zhang, C. and Laine, R. M., J. Am. Chem. Soc. 122, 6979 (2000).Google Scholar
5. Baney, R. H., Itoh, M., Sakakibara, A., and Suzuki, T., Chem. Rev. 95, 1409 (1995).Google Scholar
6. Brown, J. F. and Vogt, L.H., J. Am. Chem. Soc. 87, 4313 (1965). J. F. Brown, J. Am. Chem. Soc. 87, 4318 (1965).Google Scholar
7. Feher, F. J., Newman, D. A., and Walzer, J. F., J. Am. Chem. Soc. 111, 1741 (1989). F. J. Feher and D. A. Newman, J. Am. Chem. Soc. 112, 1931 (1990).Google Scholar
8. Wallace, W. E., Guttman, C. M., and Antonucci, J. M., Polymer 41, 2219 (2000).Google Scholar
9. Fasce, D. P., Williams, R. J. J., Erra-Balsells, R., Ishikawa, Y., and Nonami, H., Macromolecules 34, 3534 (2001).Google Scholar
10. Kim, H.J., Lee, J.K., Park, S.J., Ro, H.W., Yoo, D.Y., and Yoon, D.Y., Anal. Chem. 72, 5673 (2000).Google Scholar
11. Kim, H.J., Lee, J.K., Kim, J.B., Park, E. S., Park, S.J., Yoo, D. Y., and Yoon, D. Y., J. Am. Chem. Soc. 123, 12121 (2001).Google Scholar
12. Muller, R., Kohne, F., and Sliwinski, S. J., Prakt. Chem. 9, 71 (1959).Google Scholar
13. Voronkov, M. G., Vlasova, N. N., and Pestunovich, A. E., Russ. J. Gen. Chem. 68, 770 (1998).Google Scholar
14. Lee, J.K., Char, K., Rhee, H.W., Ro, H. W., Yoo, D. Y., and Yoon, D.Y., Polymer 42, 9085 (2001).Google Scholar
15. Ro, H. W., Char, K., Chu, S.H., Jin, M. Y., Kim, W. C., Lee, J.K., Min, S. K., Rhee, H.W., Yoo, D. Y., and Yoon, D. Y., Polym. Prep. 43(2) 1166 (2002).Google Scholar
16. Cook, R. F. and Liniger, E.G., J. Electrochem. Soc. 146, 4439 (1999).Google Scholar
17. Ro, H. W., Char, K., Lee, J.K., Min, S. K., Rhee, H.W., and Yoon, D. Y., Polym. Prep. 42(2) 889 (2001).Google Scholar
18. Gidley, D. W., Friez, W. E., Dull, T. L., Sun, J., Yee, A. F., Nguyen, C., and Yoon, D. Y., Appl. Phys. Lett. 76, 1282 (2000).Google Scholar