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Published online by Cambridge University Press: 01 February 2011
In this work, we carry out TEM analysis on GaN layers grown on sapphire and doped in situ by MBE. In parallel, photoluminescence and electroluminescence experiments are used to determine the possible emission of the grown layers. It has been shown previously that the emission peaks at Er concentrations of about 1% and that their intensity dramatically decreases with increasing Er concentration probably due to compositional quenching. We report on the evolution of the microstructure versus composition and try to explain the quenching effects that can be related to the microstructure.