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Structure and photoluminescence investigations of Er doped GaN layers grown by MBE

Published online by Cambridge University Press:  01 February 2011

T. Wojtowicz ,
H. M. Ng  and
P. Ruterana
T. Wojtowicz
Affiliation:
SIFCOM, UMR6176, CNRS-ENSICAEN, 6, Bld Maréchal Juin, 14050 Caen, France
H. M. Ng
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ, U.S.A.
P. Ruterana*
Affiliation:
SIFCOM, UMR6176, CNRS-ENSICAEN, 6, Bld Maréchal Juin, 14050 Caen, France
*
* Author for Correspondence email: [email protected], Tel: +33 2 31 45 26 53, Fax: +33 2 31 45 26 60
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Abstract

In this work, we carry out TEM analysis on GaN layers grown on sapphire and doped in situ by MBE. In parallel, photoluminescence and electroluminescence experiments are used to determine the possible emission of the grown layers. It has been shown previously that the emission peaks at Er concentrations of about 1% and that their intensity dramatically decreases with increasing Er concentration probably due to compositional quenching. We report on the evolution of the microstructure versus composition and try to explain the quenching effects that can be related to the microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.6
Copyright
Copyright © Materials Research Society 2004

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References

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