Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-27T14:10:40.705Z Has data issue: false hasContentIssue false

Structure and Electronic Properties of Silicon and Germanium Network Polyhedra

Published online by Cambridge University Press:  26 February 2011

Katsumi Tanigaki
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan, +81-22-795-6469, +81-22-795-6470
Takeshi Rachi
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Ryotaro Kumashiro
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Takuya Nishino
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Kiyotsugu Narita
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Naoya Komatsu
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Get access

Abstract

Clathrates of type I to type III are presented from the two points of views. The first one is intriguing electronic states appearing from the variation in phonons. The various phonons ranging from lattice phonons, intra-cluster phonons and atomic phonons are described in connection to the electronic states created via electron-phonon interactions. The other issue is the application to thermoelectric power materials on a basis of the concept of phonon-glass-electron-crystal (PGEC).

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kasper, J. S., Hagenmuller, P., Pouchard, M. and Cros, C., Science 150, 1713 (1965).Google Scholar
2. Kawaji, H., Horie, H., Yamanaka, S., Ishikawa, M., Phy. Rev. Lett. 74 14271429 (1995).Google Scholar
3. Grosche, F.M., Yuan, H.Q., Carrillo-Cabrera, W., Paschen, S., Langhammer, C., Kromer, F., Sparn, G., Baenitz, M., Yu., Grin, Steglich, F., Phy.Rev. Lett. 87 (2001) 247003.Google Scholar
4. Tanigaki, K., Shimuzu, T., Itoh, K.M., Teraoka, J., Moritomo, Y., Yamanaka, S., Nature Materials 2, 653655 (2003).Google Scholar
5. Rachi, T., Tanigaki, K.*, Kumashiro, R., Winter, J., and Kuzmany, H., Chem. Phys. Letters, 409 ?48 (2005).Google Scholar
6. Hermann, R.F.W., Tanigaki, K., Kawaguchi, T., Kuroshima, S., and Zhou, O., Physical Review B 6013245 (1999).Google Scholar
7. Rachi, T., Yoshino, H., Kumashiro, R., Kitajima, M., Kobayashi, K., Yokogawa, K., Murata, K., Kimura, N, Aoki, H., Fukuoka, H., Yamanaka, S., Shimotani, H., Takenobu, T., Iwasa, Y., Sasaki, T., Kobayashi, N., Miyazaki, Y., Saito, K., Guo, F.Z., Kobayashi, K., Osaka, K., Kato, K., Takata, M., and Tanigaki, K., Physical Review B 72, 144504 (2005).Google Scholar
8. Terasaki, I., Sasago, Y. and Uchinokura, K., Phys. Rev. B 56, 12685 (1997).Google Scholar
9. Yutoh, Y., Yamamoto, M., Kuboya, H. and Yamauchi, H., Electronics and Communications in Japan Part II-Electronics 88, 11 (2005).Google Scholar
10. Nolas, G. S., Cohn, J. L., Slack, G. A., Schujman, S. B., Appl. Phys. Letters 73, 178 (1998).Google Scholar