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Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD

Published online by Cambridge University Press:  15 February 2011

O. A. Golikova ,
A. N. Kuznetsov ,
V. Kh. Kudoyarova ,
M. M. Kazanin ,
G. J. Adriaenssens  and
H. Herremans
O. A. Golikova
Affiliation:
A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia.
A. N. Kuznetsov
Affiliation:
A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia.
V. Kh. Kudoyarova
Affiliation:
A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia.
M. M. Kazanin
Affiliation:
A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia.
G. J. Adriaenssens
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium.
H. Herremans
Affiliation:
K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium.
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Abstract

A systematic study of structure and electronic parameters of a-Si:H deposited by dc-magnetron assisted SiH4 decomposition (MASD) depending on substrate temperature, gas pressure, gas flow and grid mounting has been carried out. Correlation between the film microstructure, dangling bond density and electron mobility-life time product were established. The photoconductivity changes under light soaking were shown to be minimal when the films contained hydrogen in the (SiH2)n chains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 519
Copyright
Copyright © Materials Research Society 1997

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References

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