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Structural Study of V-like Columnar Inversion Domains in AlN Grown on Sapphire

Published online by Cambridge University Press:  01 February 2011

J. Jasinski ,
T. Tomaszewicz ,
Z. Liliental-Weber ,
Q. S. Paduano  and
D. W. Weyburne
J. Jasinski
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
T. Tomaszewicz
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Q. S. Paduano
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA 01731
D. W. Weyburne
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA 01731
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Abstract

V-like columnar inversion domains with a divergence angle of about 4.5° ± 1° grown in AlN films with N-polarity were studied using transmission electron microscopy (TEM) and atomic force microscopy. Such domains emerge at the surface forming a small islands in form of hexagonal, truncated pyramids. A model of such pyramid was proposed. TEM studies indicate a displacement of c/2 along the [0001] direction at the inversion domain boundary. A boundary itself is composed of long segments located on the {1100} planes, which are alternated by short segments on some inclined planes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.29
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Pearton, S. J. and Kuo, C., MRS Bull. 22, 17 (1997).Google Scholar
2. Eastman, L. F., Mishra, U. K., IEEE Spectrum, 29 (2002).Google Scholar
3. Paduano, Q. and Weyburne, D., Jpn. J. Appl. Phys., Part 1 42, 1590 (2003).Google Scholar
4. Jasinski, J., Liliental-Weber, Z., Paduano, Q. S., Weyburne, D. W., Appl. Phys. Lett. 83, 2811 (2003).Google Scholar
5. Serneels, R., Snykers, M., Delavignette, P., Gevers, R., and Amelinckx, S., Phys. Status Solidi B 58, 277 (1973).Google Scholar
6. Northrup, J. E., Neugebauer, J., Romano, L. T., Phys. Rev. Lett. 77, 103 (1996).Google Scholar