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Structural Study of V-like Columnar Inversion Domains in AlN Grown on Sapphire

Published online by Cambridge University Press:  01 February 2011

J. Jasinski ,
T. Tomaszewicz ,
Z. Liliental-Weber ,
Q. S. Paduano  and
D. W. Weyburne
J. Jasinski
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
T. Tomaszewicz
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Q. S. Paduano
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA 01731
D. W. Weyburne
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA 01731
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Abstract

V-like columnar inversion domains with a divergence angle of about 4.5° ± 1° grown in AlN films with N-polarity were studied using transmission electron microscopy (TEM) and atomic force microscopy. Such domains emerge at the surface forming a small islands in form of hexagonal, truncated pyramids. A model of such pyramid was proposed. TEM studies indicate a displacement of c/2 along the [0001] direction at the inversion domain boundary. A boundary itself is composed of long segments located on the {1100} planes, which are alternated by short segments on some inclined planes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.29
Copyright
Copyright © Materials Research Society 2004

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References

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