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Structural Quality and Electrical Behavior of Epitaxial High-k Y2O3 / Si(001)

Published online by Cambridge University Press:  11 February 2011

G. Vellianitis ,
G. Apostolopoulos ,
A. Dimoulas ,
K. Argyropoulos ,
B. Mereu ,
R. Scholz ,
M. Alexe  and
J. C. Hooker
G. Vellianitis
Affiliation:
MBE Laboratory, Institute of Materials Science, NCSR “Demokritos”, Athens, GREECE
G. Apostolopoulos
Affiliation:
MBE Laboratory, Institute of Materials Science, NCSR “Demokritos”, Athens, GREECE
A. Dimoulas
Affiliation:
MBE Laboratory, Institute of Materials Science, NCSR “Demokritos”, Athens, GREECE
K. Argyropoulos
Affiliation:
MBE Laboratory, Institute of Materials Science, NCSR “Demokritos”, Athens, GREECE
B. Mereu
Affiliation:
Max Planck Institute for Microstructural Physics, Halle, GERMANY
R. Scholz
Affiliation:
Max Planck Institute for Microstructural Physics, Halle, GERMANY
M. Alexe
Affiliation:
Max Planck Institute for Microstructural Physics, Halle, GERMANY
J. C. Hooker
Affiliation:
Philips Research Leuven, Leuven, BELGIUM.
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Abstract

Y2O3 thin films were grown directly on Si (001) by MBE and annealed in-situ under UHV at various annealing temperatures. The samples were investigated in-situ by RHEED and ex-situ by HRTEM. A 7 to 15 Å thick non-uniform interfacial amorphous layer is observed in the as-grown sample. After annealing at 490°C under UHV for 30 minutes the amorphous layer is reduced and a sharp Y2O3/Si interface is obtained. At higher annealing temperatures, YSi2 islands start to form at the Y2O3/Si interface. I-V measurements performed on generic MIS structures show that the annealed samples exhibit higher leakage current density than the as-grown sample, due to reduction of the wide band gap interfacial layer. Leakage current densities in annealed samples remain below 1A/cm2, which is acceptable for future high-κ transistor fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , T7.10/N9.10
Copyright
Copyright © Materials Research Society 2003

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References

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