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Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

Published online by Cambridge University Press:  15 February 2011

A. Piotrowska ,
E. Kańifiska ,
M. Guziewicz ,
E. Mizera ,
E. Dynowska ,
X. W. Lin ,
S. Rouvimov ,
Z. Liliental Weber  and
S. Kwiatkowski
A. Piotrowska
Affiliation:
Institute of Electron Technology, Warszawa, Poland, [email protected]
E. Kańifiska
Affiliation:
Institute of Electron Technology, Warszawa, Poland, [email protected]
M. Guziewicz
Affiliation:
Institute of Electron Technology, Warszawa, Poland, [email protected]
E. Mizera
Affiliation:
Institute of Physics, PAS, Warszawa, Poland
E. Dynowska
Affiliation:
Institute of Physics, PAS, Warszawa, Poland
X. W. Lin
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA
S. Rouvimov
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA
Z. Liliental Weber
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA
S. Kwiatkowski
Affiliation:
Institute of Nuclear Studies Warszawa, Poland
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Abstract

Annealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 669
Copyright
Copyright © Materials Research Society 1996

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References

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