Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T17:27:56.538Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

Published online by Cambridge University Press:  10 February 2011

L. C. Chen ,
C. T. Wu ,
C.-Y Wen ,
J.-J. Wu ,
W. T. Liu  and
C. W. Liu
L. C. Chen
Affiliation:
National Taiwan University, Center for Condensed Matter Sciences, Taipei, Taiwan
C. T. Wu
Affiliation:
National Taiwan University, Center for Condensed Matter Sciences, Taipei, Taiwan
C.-Y Wen
Affiliation:
National Taiwan University, Center for Condensed Matter Sciences, Taipei, Taiwan
J.-J. Wu
Affiliation:
Academia Sinica, Institute of Atomic and Molecular Sciences, Taipei, Taiwan
W. T. Liu
Affiliation:
National Taiwan University, Department of Electrical Engineering, Taipei, Taiwan
C. W. Liu
Affiliation:
National Taiwan University, Department of Electrical Engineering, Taipei, Taiwan
Get access

Abstract

Dielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 219
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Devine, R. A. B., Appl. Phys. Lett. 68, 1924 (1996).Google Scholar
2.Maeda, M., Nakamura, H., J. Appl. Phys. 58, 484 (1985).Google Scholar
3.Ma, T. P., Appl. Surf. Sci. 117–118, 259 (1997).Google Scholar
4.Chen, L. C., Chen, C. K., Wei, S. L., Bhusari, D. M., Chen, K. H.. Chen, Y F., Jong, Y. C. and Huang, Y S., Appl. Phys. Lett. 72, 2463 (1998).Google Scholar
5.Chen, L. C., Chen, K. H., Wei, S. L., Kichambare, P. D., Wu, J. J., Lu, T. R. and Kuo, C. T., Thin Solid Films 355–356, 112 (1999).Google Scholar
6.Badzian, A., Badzian, T., Roy, R. and Drawl, W., Thin Solid Films 354, 148 (1999).Google Scholar
7. See, for example, a forthcoming review chapter on SiCxNy by Chen, L. C., Chen, K. H., Wu, J. J., Bhusari, D. M. and Lin, M. C., to appear in Handbook of Advanced Electronic and Photonic Materials, ed. Nalwa, H. S., by Academic Press (2000).Google Scholar
8.Aspnes, D. E., Thin Solid Films 89, 249 (1982).Google Scholar
9.Mott, N. F., Adv. Phys. 16, 49 (1967).Google Scholar