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Structural Modifications of nc-Si/SiO2 Superlattices by Localized Photo-induced Heating

Published online by Cambridge University Press:  01 February 2011

B. V. Kamenev ,
H. Grebel ,
L. Tsybeskov  and
V. Yu. Timoshenko
B. V. Kamenev
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, USA
H. Grebel
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, USA
L. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, USA
V. Yu. Timoshenko
Affiliation:
Physics Department, Moscow State University, Moscow, Russian Federation
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Abstract

Structural modifications in nanocrystalline silicon-silicon dioxide (nc-Si/SiO2) superlattices (SL) under high intensity laser irradiation have been studied experimentally and theoretically. The melting threshold in nc-Si/SiO2 SLs was found in the range of 5–8 kW/cm2 for cw excitation by 514 nm line of Ar+ laser and ∼11–15 mJ/cm2 for pulsed irradiation by 248 nm, π∼20 ns KrF laser. The irradiation of the samples above the melting threshold induces the irreversible modification of nc-Si layers, which is controlled by the thickness of the separating SiO2 layers, and increases the PL intensity increases by more than 300%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F7.26
Copyright
Copyright © Materials Research Society 2005

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References

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