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Structural Investigations of Self-Assembled Ge-Dots by X-Ray Diffraction and Reflection

Published online by Cambridge University Press:  03 September 2012

A.A. Darhuber ,
V. Holy ,
J. Stangl ,
G. Bauer ,
P. Schittenhelm  and
G. Abstreiter
A.A. Darhuber
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria.
V. Holy
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria.
J. Stangl
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria.
G. Bauer
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria.
P. Schittenhelm
Affiliation:
Walter Schottky Institut, TU München, Am Coulombwall 2, D-85748 Garching, Germany.
G. Abstreiter
Affiliation:
Walter Schottky Institut, TU München, Am Coulombwall 2, D-85748 Garching, Germany.
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Abstract

Self-organized Ge-dots on (001)-oriented Si-substrates have been studied using two-dimensionally resolved high resolution x-ray diffraction and reflectivity. The degree of the vertical correlation of the dot positions ("stacking") has been derived as well as a lateral ordering of the dots in a (disordered) square array with main axes parallel to ]100] and ]010].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 199
Copyright
Copyright © Materials Research Society 1997

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