Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-17T14:53:48.116Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Investigation of Electrochemically Etched Silicon

Published online by Cambridge University Press:  28 February 2011

B. J. Heuser ,
S. Spooner ,
C. J. Glinka ,
D. L. Gilliam ,
N. A. Winslow  and
M. S. Boley
B. J. Heuser
Affiliation:
University of Missouri Research Reactor Center, Columbia. MO
S. Spooner
Affiliation:
National Center for Small-Angle Scattering Research, Oak Ridge National Laboratory, Oak Ridge, TN
C. J. Glinka
Affiliation:
Reactor Radiation Division, National Institute of Standards and Technology, Gaithersburg, MD
D. L. Gilliam
Affiliation:
Lincoln University, Jefferson City, MO
N. A. Winslow
Affiliation:
Department of Physics and Astronomy, University of Missouri, Columbia, MO
M. S. Boley
Affiliation:
Department of Physics and Astronomy, University of Missouri, Columbia, MO
Get access

Abstract

Small-angle neutron scattering (SANS) measurements of four electrochemically etched, porous silicon (PS) samples have been performed over a wide wavevector transfer (Q) range. The intermediate to high Q results can be modeled with a non-particulate, random phase model. Correlation length scales on the order of 1 to 2 nm thought to characterize the PS skeleton have been deduced from the SANS data. The microstructural anisotropy was studied tilting two of the samples with respect to the neutron beam. These samples exhibited an asymmetric scattering pattern at intermediate Q (0.1 ≤ Q ≥ 0.6 nm-1) in this condition. Photoluminescence spectra from all four samples have been recorded as well. A correlation appears to exist between the SANS and photoluminescence measurements. An x-ray diffraction measurement of one sample demonstrates that the PS layer retains the silicon lattice structure. Significant peak broadening is observed that we interpreted as a quasi-particle size effect The PS particle size calculated from the x-ray diffraction measurement is equal to the correlation length obtained in the SANS measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 209
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2) Tsai, C., Li, K.-H., Sarathy, J., Shih, S., Campbell, J.C., Hance, B.K., and Whit, J.M., Appl. Phys. Lett. 59, 2814 (1991).Google Scholar
3) Friedersdorf, L.E., Searson, P.C., Prokes, S.M., Glembocki, O.J., and Macauley, J.M., Appl. Phys. Lett 60, 2285 (1992).Google Scholar
4) Debye, P. and Bueche, A.M., J. Appl. Phys. 20, 518 (1949).Google Scholar
5) In die limit of high Q, die Debye-Bueche law evolves to a 1/Q4behavior typical of sharp, smoodi interfaces. Surfaces exhibiting fractal dimensionality, on the odier hand, obey a 1/Q3 to 1/Q4law. For a derivation of die fractal small-angle scattering law, seeGoogle Scholar
Schmidt, P.W., J. Appl. Cryst. 24, 414 (1991).Google Scholar
6) Vezin, V., Goudeau, P., Naudon, A., Halimaoui, A., and Bomchil, G., Appl. Phys. Lett. 60, 2625 (1992).Google Scholar
7) Schwartz, L.H. and Cohen, J.B., Diffraction From Materials (Academic Press, New York 1977), p. 379.Google Scholar