Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-23T14:57:30.640Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Evolution of Amorphous Ge2Sb2Te5 Thin Films in the Transition to the Crystalline Phase

Published online by Cambridge University Press:  01 February 2011

Riccardo De Bastiani ,
Alberto Maria Piro ,
Maria Grazia Grimaldi ,
Emanuele Rimini ,
Giuseppe Baratta  and
Giovanni Strazzulla
Riccardo De Bastiani
Affiliation:
[email protected], Università di Catania and MATIS CNR-INFM, Dipartimento di Fisica ed Astronomia, 64 via S. Sofia, I-95123 Catania, Italy, Catania, 95123, Italy, +390953785289
Alberto Maria Piro
Affiliation:
[email protected], Università di Catania and MATIS CNR-INFM, Dipartimento di Fisica ed Astronomia, 64 via S. Sofia, Catania, 95123, Italy
Maria Grazia Grimaldi
Affiliation:
[email protected], Università di Catania and MATIS CNR-INFM, Dipartimento di Fisica ed Astronomia, 64 via S. Sofia, Catania, 95123, Italy
Emanuele Rimini
Affiliation:
[email protected], Università di Catania and CNR-IMM, Dipartimento di Fisica ed Astronomia, 64 via S. Sofia, Catania, 95123, Italy
Giuseppe Baratta
Affiliation:
[email protected], INAF, Osservatorio Astrofisico di Catania, via S. Sofia 78, Catania, 95123, Italy
Giovanni Strazzulla
Affiliation:
[email protected], INAF, Osservatorio Astrofisico di Catania, via S. Sofia 78, Catania, 95123, Italy
Get access

Abstract

The crystallization kinetics of as-deposited amorphous Ge2Sb2Te5 thin films has been measured by in situ time resolved reflectivity. X-ray diffraction and Raman scattering analyses of partially transformed samples allowed to correlate the evolution of the transition to the structural modification in the long and short range configuration. The experimental results evidenced that during the early stages of crystallization there is a reduction of Ge-Te tetrahedral bonds, characteristics of the Ge coordination in amorphous Ge2Sb2Te5 films.

Keywords

phase transformationx-ray diffraction (XRD)Raman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1072: Symposium G – Phase-Change Materials for Reconfigurable Electronics and Memory Applications , 2008 , 1072-G02-05
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lankhorst, M. H. R. Ketelaars, B. W. S. M. M. Wolters, R. A. M. Nat. Mater. 4, 347 (2005).Google Scholar
[2] Kolobov, A. Fons, P. Frenkel, A. I. Ankundinov, A. L. Tominaga, J. Uruga, T. Nature Materials, Vol 3, 703 (2004).Google Scholar
[3] Lee, Bong-Sub, Abelson, John R., Bishop, Stephen G., Kang, Dae-Hwan, Cheong, Byung-ki, Kim, Ki-Bum, J. Appl. Phys 97, 93509 (2005).Google Scholar
[4] Bruggeman, D. A. G. Ann. Phys. Leipzigd 23, 636 (1935).Google Scholar
[5] Friedrich, I. Weidenhof, V. Njoroge, W. Franz, P. and Wuttig, M. J. Appl. Phys. 87, 4130 (2000).Google Scholar
[6] Nonaka, T. Ohbayashi, G. Toriumi, Y. Mori, Y. Hashimoto, H. Thin Solid Films 370, 258 (2000).Google Scholar
[7] Morales-Sanchez, E., Prokhorov, E.F. Gonzalez-Hernandez, J., Mendoza-Galvan, A., Thin Solid Films 471, 243 (2005).Google Scholar
[8] Gonzalez-Hernandez, J., Chao, B.S. Strand, D. Ovshinsky, S.R. Pawlik, D. Gasiorowski, P. Appl. Phys. Com. 11, 557 (1992).Google Scholar
[9] Först, M., Dekorsy, T. Trappe, C. Laurenzis, M. Kurz, H. Béchevet, B., Appl. Phys. Lett. 77, 1964 (2000).Google Scholar
[10] Sugai, S. Phys. Rev. B 35, 1345 (1987).Google Scholar
[11] Tominaga, J. and Atoda, N. Jpn. J. Appl. Phys. 38, L322 (1999).Google Scholar
[12] Andrikopoulos, K.S. Yannopoulos, S.N. Kolobov, A.V. Fons, P. Tominaga, J. J. Phys. Chem. Sol. 68, 1074 (2007).Google Scholar