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Structural Characterization of Si1-xGex Multilayer Growth On Patterned Substrates by Very-Low-Pressure Cvd

Published online by Cambridge University Press:  25 February 2011

Julie A. Tsai ,
Syun-Ming Jang ,
Curtis Tsai  and
Rafael Reif
Julie A. Tsai
Affiliation:
Department of Materials Science and Engineering
Syun-Ming Jang
Affiliation:
Department of Materials Science and Engineering
Curtis Tsai
Affiliation:
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139
Rafael Reif
Affiliation:
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Strained Si1-xGex multilayers were deposited heteroepitaxially at 625°C on patterned oxide Si substrates using a VLPCVD (Very-Low-Pressure Chemical Vapor Deposition) reactor. Undoped Si1-xGex. layers were commensurate for Ge contents up to 23 at.% and exhibited a peak in growth rate at 8 at.% Ge. Both n-type and p-type in-situ doping were accomplished in layers having 20 at.% Ge without degradation of epitaxial quality. Arsenic and boron chemical concentrations near 1020cm−3 were achieved. Growth rates of in-situ doped Si1-xGex. were unaffected by B2H1 gas but greatly reduced by AsH3 gas. Both undoped and in-situ doped muftilayers displayed a window-size dependence of misfit dislocations after defect etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 369
Copyright
Copyright © Materials Research Society 1991

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References

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