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Structural Characterization of Microcrystalline Silicon Solar Cells Fabricated by Conventional RF-PECVD

Published online by Cambridge University Press:  01 February 2011

Liwei Li ,
Yuan-Min Li ,
J. A. Anna Selvan ,
Alan E. Delahoy  and
Roland A. Levy
Liwei Li
Affiliation:
Energy Photovoltaics, Inc., 276 Bakers Basin Road, Lawrenceville, NJ 08648
Yuan-Min Li
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
J. A. Anna Selvan
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
Alan E. Delahoy
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
Roland A. Levy
Affiliation:
Energy Photovoltaics, Inc., 276 Bakers Basin Road, Lawrenceville, NJ 08648
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Abstract

Absttact:

Direct structural characterization of single junction p-i-n type μc-Si:H solar cells prepared in a single chamber, batch process type RF-PECVD system has been carried out using Raman scattering, XRD, and AFM. The overall degree of microcrystallinity of μc-Si:H i-layers is presented in terms of the ratio of peak intensities (Ic/Ia) of Raman shift at around 520 cm-1 and 480 cm-1, respectively. Strong correlations among device performance, i-layer structural properties, and uniformity have been established using information provided by such direct characterization. Our data support the notion that stable, high quality μc-Si i-layers are grown near the ‘edge’ of microcrystalline-to-amorphous phase transition. Solar cells made from such optimal areas exhibit moderate microcrystallinity (moderate Ic/Ia values). Preferential orientation corresponding to Si (220) planes was observed on those optimal solar cells, which also exhibit less-regular surface morphologies and lower surface roughness compared to that observed on solar cells with mixed-phase or highly crystalline Si:H i-layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A5.15
Copyright
Copyright © Materials Research Society 2003

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