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Structural Characterization of MBE Grown (001) CdTe Films by Means of Transmission Electron Microscopy, Low Temperature Photoluminescence and Double Crystal Rocking Curves.*

Published online by Cambridge University Press:  26 February 2011

M. G. Burke ,
W. J. Choyke ,
N. J. Doyle ,
Z. C. Feng ,
M. H. Hanes  and
A. Mascarenhas
M. G. Burke
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260
W. J. Choyke
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260 Westinghouse R&D Center, Pittsburgh, PA 15235
N. J. Doyle
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
Z. C. Feng
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260
M. H. Hanes
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
A. Mascarenhas
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260
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Abstract

The effects of chemical etching, mechanical thinning, and ion milling on the low temperature photoluminescence spectra of MBE grown (001) CdTe films are reported. Line defects observed by TEM are correlated with photoluminescence. It is shown that X-ray D.C.R.C, measurements in these films are weighted averages over the whole thickness of the films and therefore weakly reflect the structural perfection of the samples near the surface as deduced by photoluminescence.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 615
Copyright
Copyright © Materials Research Society 1987

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Footnotes

*

This work was supported in part by NSF Grant No. DMR-84–03596.

References

REFERENCES

1) Feng, Z.C., Mascarenhas, A., Choyke, W.J., Farrow, R.F.C., Greggi, J. Jr, and Shirland, F.A.: Appl. Phys. Lett., 1986, 47, 24.Google Scholar
2) Feng, Z.C., Mascarenhas, A., Choyke, W.J., Farrow, R.F.C., Greggi, J. Jr, and Shirland, F.A.: MRS Symposia Proceedings Vol. 56, Layered Structures and Epitaxy, ed. Gibson, M., Osbourn, G.C., Tromp, R.M., 1986.Google Scholar
3) Feng, Z.C., Mascarenhas, A. and Choyke, W.J., J. of Lum., Vol. 35 (1986), 329.Google Scholar
4) Choyke, W.J., Burke, M.G., Feng, Z.C., Hanes, M.H. and Mascarenhas, A., Proc. of the “14th Intl. Conf. on Defects in Semiconductors” Paris (1986).Google Scholar
5) Hall, E.L., D. Phil. Thesis, Massachusetts Institute of Technology (1977).Google Scholar
6) Cullis, A.G., Chew, N.G. and Hutchinson, J.L., Ultramicroscopy, Vol. 17 (1985), p. 203.Google Scholar