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Structural characterization and Coulomb blockade of a-SiNx/ nanocrystalline Si /a-SiNx asymmetric double-barrier structures

Published online by Cambridge University Press:  01 February 2011

L. C. Wu ,
M. Dai ,
X. F. Huang ,
P. G. Han ,
L. W. Yu ,
H. C. Zou ,
W. Li  and
K. J. Chen
L. C. Wu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
M. Dai
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
X. F. Huang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
P. G. Han
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
L. W. Yu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
H. C. Zou
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
W. Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
K. J. Chen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
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Abstract

We have fabricated a series of a-SiNx/nc-Si/a-SiNx double-barrier structural samples by plasma-enhanced chemical vapor deposition (PECVD) and subsequent thermal annealing technique. The micro-structural properties of the samples were studied by using Raman scattering spectroscopy, planar and cross-section transmission electron microscopy (TEM). The electrical properties of the samples were investigated by frequency dependence of capacitance voltage (C-V) measurements. Charging effect in the nc-Si was exhibited through the hysteresis phenomena of the C-V curve and explained by F-N tunneling. For the thicker SiNx barrier layer samples, Coulomb blockade effect was observed in C-V curve for the sample with thinner SiNx barrier layer, in which two capacitance peaks appeared, and explained by direct tunneling of electrons into the nc-Si through the tunneling SiNx layers. From the interval between the two peaks, the Coulomb charging energy of nc-Si dot was estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F3.6
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F., and Chan, K., Appl. Phys. Lett. 68, 1377 (1996)Google Scholar
2. Hirano, Y., Sato, F., Aihara, S., Saito, N., Miyazaki, S., and Hirose, M., Appl. Phys. Lett. 79, 2255 (2001)Google Scholar
3. Cheng, I. and Wagner, S., Appl. Phys. Lett. 80, 440 (2002)Google Scholar
4. Kim, Y., Cheong, H. J., Park, K. H., Chung, T. H., Brak, H. J., Yi, J., Bang, S. H. and Cho, J. H., Semicond. Sci. Technol. 17, 1039 (2002)Google Scholar
5. Nicollian, E. H. and Goetzberger, A., Bell Syst. Tech. J. 46, 1055 (1967)Google Scholar
6. Shur, M., Physics of semiconductor devices (Prentice Hall, 1990), Chaps. 2–4Google Scholar