Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T17:29:32.362Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Changes and Hydrogen Motion in A-SI:H Observed by Proton Nmr

Published online by Cambridge University Press:  15 February 2011

Jonathan Baugh ,
Daxing Han ,
Qi Wang  and
Yue Wu
Jonathan Baugh
Affiliation:
Department of Physics & Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255, [email protected]
Daxing Han
Affiliation:
Department of Physics & Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255, [email protected]
Qi Wang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, CO 80401
Yue Wu
Affiliation:
Department of Physics & Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255, [email protected]
Get access

Abstract

Proton nuclear magnetic resonance (NMR) is applied to investigate hydrogen dynamics and microstructures in a-Si:H. In addition to the generic broad and narrow lines observed in all aSi:H, an additional narrow line (about 1 kHz wide) is observed as the temperature is raised above RT. This narrow line is shifted to the up-field by about 4 ppm with respect to the generic narrow line of a few kHz in width. Below 150°C, the change of the proton spectrum with temperature is reversible; the hydrogen associated with this additional narrow line is shown to originate from hydrogen originally associated with the broad line. The spin-lattice relaxation time T1 of this up-field shifted narrow line is about 0.4 s. This short T1, along with its small linewidth, suggests that this line is associated with molecular hydrogen, possibly trapped in sites of atomic dimensions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 383
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fritzsche, H., in Amorphous and Microcrystalline Silicon Technology, edited by Wagner, S., Hack, M., Schiff, E. A., Schropp, R., Shimizu, I., (Mater. Res. Soc. Proc. 467, San Francisco, CA, 1997), pp. 19–30.Google Scholar
2. Stutzmann, M., in Amorphous and Microcrystalline Silicon Technology, edited by Wagner, S., Hack, M., Schiff, E. A., Schropp, R., Shimizu, I., (Mater. Res. Soc. Proc. 467, San Francisco, CA, 1997), pp. 37–48.Google Scholar
3. Stutzmann, M., Jackson, W. B., and Tsai, C. C., Phys. Rev. B 32, 23 (1985).Google Scholar
4. Zafar, S. and Schiff, E. A., Phys. Rev. Lett. 66, 1493 (1991).Google Scholar
5. Branz, H. M., Phys. Rev. B 59, 5498 (1999).Google Scholar
6. Santos, P. V., Johnson, N. M., and Street, R. A., Phys. Rev. Lett. 67, 2686 (1991).Google Scholar
7. Branz, H. M., Asher, S. E., and Nelson, B. P., Phys. Rev. B 47, 7061 (1993).Google Scholar
8. Street, R. A., Kakalios, J., and Hayes, T. M., Phys. Rev. B 34, 3030 (1986).Google Scholar
9. Smith, Z. E. and Wagner, S., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific Co. Singapore, 1989), pp. 409–460.Google Scholar
10. Kakalios, J. and Jackson, W. B., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific Co. Singapore, 1989), pp. 207–245.Google Scholar
11. Reimer, J. A., Vaughan, R. W., and Knights, J. C., Phys. Rev. B 24, 3360 (1981).Google Scholar
12. Carlos, W. E. and Taylor, P. C., Phys. Rev. B 26, 3605 (1982).Google Scholar
13. Conradi, M. S. and Norberg, R. E., Phys. Rev. B 24, 2285 (1981).Google Scholar
14. Boyce, J. B. and Stutzmann, M., Phys. Rev. Lett. 54, 562 (1985).Google Scholar
15. Norberg, R. E., Fedders, P. A., and Leopold, D. J., in Amorphous Silicon Technology, edited by Hack, M., Schiff, E. A., Powell, M., Matsuda, A., and Madan, A. (Mater. Res. Soc. Proc. 420, San Francisco, CA, 1996), pp. 475–483.Google Scholar
16. Mahan, A. H., Carapella, J., Nelson, B. P., Crandall, R. S., and Balberg, I., J. Appl. Phys. 69, 6728 (1991).Google Scholar
17. Yang, L. and Chen, L., Appl. Phys. Lett. 63, 400 (1993).Google Scholar
18. Zhao, Y., Zhang, D., Kong, G., Pan, G., and Liao, X., Phys. Rev. Lett. 74, 558 (1995).Google Scholar
19. Wu, Y., Stephen, J. T., Han, D., Rutland, J. M., Crandall, R. A., and Mahan, A. H., Phys. Rev. Lett. 77, 2049 (1996).Google Scholar
20. Lamotte, B., Phys. Rev. Lett. 53, 576 (1984).Google Scholar
21. Norberg, R. E., Leopold, D. J., and Fedders, P. A., J. Non-Cryst. Solids 227–230, 124 (1998).Google Scholar