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Structural and Surface Morphology Changes in CuInSe2 Thin Films as a Function of Cu/In Ratio

Published online by Cambridge University Press:  10 February 2011

P. Fons ,
S. Niki ,
A. Yamada  and
D. J. Tweet
P. Fons
Affiliation:
Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba, Ibaraki, Japan 305
S. Niki
Affiliation:
Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba, Ibaraki, Japan 305
A. Yamada
Affiliation:
Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba, Ibaraki, Japan 305
D. J. Tweet
Affiliation:
Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba, Ibaraki, Japan 305
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Abstract

Due to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450° C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1 · 1 · 2} planes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 9
Copyright
Copyright © Materials Research Society 1997

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References

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