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Structural and Optical Properties of GaN Quantum Dots

Published online by Cambridge University Press:  01 February 2011

B. Daudin ,
N. Gogneau ,
C. Adelmann ,
E. Sarigiannidou ,
T. Andreev ,
F. Enjalbert ,
E. Monroy ,
F. Fossard ,
J. L. Rouvière  and
Y. Hori
...Show all authors
B. Daudin
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
N. Gogneau
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
C. Adelmann
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
E. Sarigiannidou
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
T. Andreev
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
F. Enjalbert
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
E. Monroy
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
F. Fossard
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
J. L. Rouvière
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
Y. Hori
Affiliation:
NGK Insulators, LTD. 2–54 Sudacho, Mizuhoku, Nagoya, Japan
X. Biquard
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
D. Jalabert
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
Le Si Dang
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble Cedex 9, France.
M. Tanaka
Affiliation:
NGK Insulators, LTD. 2–54 Sudacho, Mizuhoku, Nagoya, Japan
O. Oda
Affiliation:
NGK Insulators, LTD. 2–54 Sudacho, Mizuhoku, Nagoya, Japan
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Abstract

Growth conditions, structural and optical properties of GaN quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value and on growth temperature, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow or of the Frank-Van der Merwe type. It will be shown that vertical correlation results in a red shift and in a narrowing of the photoluminescence spectra.

Growth of Eu-doped GaN quantum dots embedded in AlN will be described. Intense photoluminescence associated with Eu has been measured, with no GaN band-edge emission, as an evidence that carrier recombination mostly occurs through rare earth ion excitation. Persistent photoluminescence of Eu-doped GaN quantum dots as a function of temperature has been put in evidence, as a further confirmation of the recombination of confined carriers through Eu ion excitation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y4.7
Copyright
Copyright © Materials Research Society 2004

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References

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