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Structural and Optical Properties of β-FeSi2/Si(100) Prepared by Laser Ablation Method

Published online by Cambridge University Press:  15 February 2011

H. Kakemoto ,
Y. Makita ,
A. Obara ,
Y. Tsai ,
S. Sakuragi ,
S. Ando  and
T. Tsukamoto
H. Kakemoto
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan Science University of Tokyo, 1–3 Kagurazaka, Shinjuku, Tokyo 162, Japan
Y. Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
A. Obara
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Y. Tsai
Affiliation:
Union Material, 1620 Oshido-jyodai, Tonemachi, Ibaraki 270–12, Japan
S. Sakuragi
Affiliation:
Union Material, 1620 Oshido-jyodai, Tonemachi, Ibaraki 270–12, Japan
S. Ando
Affiliation:
Science University of Tokyo, 1–3 Kagurazaka, Shinjuku, Tokyo 162, Japan
T. Tsukamoto
Affiliation:
Science University of Tokyo, 1–3 Kagurazaka, Shinjuku, Tokyo 162, Japan
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Abstract

β-FeSi2 is a promising material for the application of various electronic, optoelectronic and energy devices. We present here the semiconducting properties of β-FeSi2 films on Si(100) substrate prepared by laser ablation method. Samples were grown using poly-crystalline bulk β-FeSi2 prepared by horizontal gradient freeze method. For the monitoring of growth, in-situ observation of ablation plume was made through fluorescence spectroscopy. Reflection of highenergy electron beam diffraction (RHEED) was also made in-situ to see the surface morphology. Characterization of the films by X-ray diffraction presented purely P3(220) orientation. Raman scattering measurements at room temperature also indicated that the grown films are semiconducting β-FeSi2. Optical absorption spectra at room temperature showed absorption coefficient higher than 105 cm−1 above the band-gap (˜1.2 eV). It was revealed that high quality semiconducting β-FeSi2 films can be fabricated by laser ablation method without post-annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 478: Symposium Q – Thermoelectric Materials - New Directions and Approaches , 1997 , 273
Copyright
Copyright © Materials Research Society 1997

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