Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T09:10:22.277Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Optical Characterization of InGaN Layers Grown by MOMBE

Published online by Cambridge University Press:  01 February 2011

P. Singh ,
J. Aderhold ,
J. Graul ,
V. Yu. Davydov ,
F. Gourbilleau  and
P. Ruterana
P. Singh
Affiliation:
SIFCOM UMR 6176, ENSICAEN-CNRS, 6, Bd du Maréchal Juin, 14050 Caen Cedex
J. Aderhold
Affiliation:
LFI, University of Hannover, Schneiderberg 32, 30167, Hannover, Germany
J. Graul
Affiliation:
LFI, University of Hannover, Schneiderberg 32, 30167, Hannover, Germany
V. Yu. Davydov
Affiliation:
Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia
F. Gourbilleau
Affiliation:
SIFCOM UMR 6176, ENSICAEN-CNRS, 6, Bd du Maréchal Juin, 14050 Caen Cedex
P. Ruterana*
Affiliation:
SIFCOM UMR 6176, ENSICAEN-CNRS, 6, Bd du Maréchal Juin, 14050 Caen Cedex
*
* Author for Correspondence, email: [email protected], Tel: +33 2 31 45 26 53, Fax: +33 2 31 45 26 60
Get access

Abstract

The investigated InGaN ternary films were grown by MOMBE, with the In fraction varying from 6% to 100%. Using XRD and TEM, we determine the crystalline state, the nature of defects inside the layers and their distribution as related to the In concentration. The band gap of the alloys was studied through PL measurements, it is below 1 eV for InN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y9.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bhuiyan, A.G., Hashimoto, A., and Yamamoto, A. J. Appl. Phys. 94, 2779 (2003)Google Scholar
[2] Singh, M. and Singh, J., J. Appl. Phys. 94, 2498(2003)Google Scholar
[3] Davydov, V. Yu., Klochikhin, A.A., Emtsev, V.V., Ivanov, S.V., Vekshin, V.V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, A.V., Hashimoto, A., Yamamoto, A., Aderhold, J., Graul, J., Haller, E. E., Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1), Phys. Stat. Solidi (b) 230, R4(2002)Google Scholar
[4] Ho, I. and Stringfellow, G. B., Appl. Phys. Lett. 69, 2701(1996)Google Scholar
[5] Cho, H. K., Leeb, J. Y. and Yang, G. M., Appl. Phys. Lett. 80, 1370(2002)Google Scholar