Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T22:57:53.786Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Optical Characterization of CuxGaySe2 Thin Films under Excitation with Above and Below Band Gap Laser Light

Published online by Cambridge University Press:  01 February 2011

C. Xue ,
D. Papadimitriou ,
Y.S. Raptis ,
T. Riedle ,
N. Esser ,
W. Richter ,
S. Siebentritt ,
S. Nishiwaki ,
J. Albert  and
M.Ch. Lux-Steiner
C. Xue
Affiliation:
National Technical University of Athens, Department of Physics, GR-15780 Athens, Greece.
D. Papadimitriou
Affiliation:
National Technical University of Athens, Department of Physics, GR-15780 Athens, Greece.
Y.S. Raptis
Affiliation:
National Technical University of Athens, Department of Physics, GR-15780 Athens, Greece.
T. Riedle
Affiliation:
Technical University of Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin, Germany.
N. Esser
Affiliation:
Technical University of Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin, Germany.
W. Richter
Affiliation:
Technical University of Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin, Germany.
S. Siebentritt
Affiliation:
Hahn-Meitner Institute, Glienickerstr. 100, D-14109 Berlin, Germany.
S. Nishiwaki
Affiliation:
Hahn-Meitner Institute, Glienickerstr. 100, D-14109 Berlin, Germany.
J. Albert
Affiliation:
Hahn-Meitner Institute, Glienickerstr. 100, D-14109 Berlin, Germany.
M.Ch. Lux-Steiner
Affiliation:
Hahn-Meitner Institute, Glienickerstr. 100, D-14109 Berlin, Germany.
Get access

Abstract

CuxGaySe2 MOCVD and PVD grown films were structurally and optically characterized by Raman, Micro-Raman and photoluminescence spectroscopy. Defect related photoluminescence excitation with wavelengths varying across the material band gap reveals: a) in Cu-rich CuGaSe2 films, three band edge splitting due to the spin-orbit interaction and the crystal field, and donor-acceptor pair recombination between a shallow donor and two different acceptor levels, and b) in Ga-rich CuGaSe2 films, donor-acceptor pair transitions between quasi-continua of donor and acceptor levels related to potential fluctuations. Raman spectra of CuxGaySe2films, excited by laser light near and below the material band gap, show intense modes at 197cm-1, 187cm-1, and 277cm-1, which can be used as indicators of crystallinity and Ga-content of the films. Polarization- and angular- dependent micro-Raman spectra of MOCVD CuGaSe2 indicate that CuxSey-crystallites, dispersed on the surface of Cu-rich films, are grown oriented with their c-axis perpendicular to the film surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 730: Symposium V – Materials for Energy Storage, Generation, and Transport , 2002 , V3.7
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Contreras, M., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F., and Noufi, R., Prog. Photovoltaics 7, 311 (1999).Google Scholar
2. Schuler, S., Nishiwaki, S., Dziedzina, M., Klenk, R., Siebentritt, S., Lux-Steiner, M. Ch., MRS Proc. 668 (2002) H5.14.Google Scholar
3. Bauknecht, A., Siebentritt, S., Albert, J., and Lux-Steiner, M. Ch., J. Appl. Phys. 89(8), 4391 (2001).Google Scholar
4. Bauknecht, A., Siebentritt, S., Albert, J., Tomm, Y., and Lux-Steiner, M. Ch., Jap. J. Appl. Phys. 39, suppl. 39-1, 322 (2000).Google Scholar
5. Ishii, M., Shibata, K., Nozaki, H. J. Solid State Chem. 105, 504 (1993).Google Scholar