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Structural and Electronic Properties of Rare-Earth Nanowires
Published online by Cambridge University Press: 01 February 2011
Abstract
Sub-monolayer coverages of the rare-earth metal Ho were deposited onto Si(001) substrates at elevated temperatures resulting in the formation of rare-earth silicide nanowires. Between the nanowires the substrate area reconstructs into either a 2×4 or 2×7 reconstruction depending on the specific preparation conditions. We have studied the structural and electronic properties of both the nanowires and the reconstructed areas with the complementary techniques of scanning tunneling microscopy (STM) and metastable de-excitation spectroscopy (MDS) revealing the electronic similarities between the 2×4 and 2×7 phases. Evidence for the presence of hybridized Si 3s3p-Ho 6s5d bonds suggests that these reconstructions form as a precursor to nanowire growth.
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- Copyright © Materials Research Society 2009
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