Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-19T18:43:41.182Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electronic Properties of Hydrogenated Nanocrystalline Silicon Films Made with Hydrogen Dilution Profiling Technique

Published online by Cambridge University Press:  01 February 2011

Keda Wang ,
Daxing Han ,
D. L. Williamson ,
Brittany Huie ,
J. R. Weinberg-Wolf ,
Baojie Yan ,
Jeffrey Yang  and
Subhendu Guha
Keda Wang
Affiliation:
Physics Department, Boston College, Chestnut Hill, MA 02467
Daxing Han
Affiliation:
Physics Department, Boston College, Chestnut Hill, MA 02467
D. L. Williamson
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
Brittany Huie
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599
J. R. Weinberg-Wolf
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599
Baojie Yan
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, MI 48084
Jeffrey Yang
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, MI 48084
Subhendu Guha
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, MI 48084
Get access

Abstract

We used X-ray diffraction (XRD), Raman scattering and photoluminescence (PL) spectroscopy to characterize structural and electronic properties of nc-Si:H films made with different hydrogen dilution ratios and hydrogen dilution profiling with continuously reduced hydrogen dilution during the deposition. The XRD results show that the crystalline volume fraction (fc) is in the range of 60-70% with grain size of 22-26 nm for the nc-Si:H films studied. Comparing the sample made using hydrogen dilution profiling to that with constant hydrogen dilution, the hydrogen dilution profiling promotes the (220) preferential orientation due to a very high hydrogen dilution in the initial growth. The Raman results show that the fc is in the range of 60-90%, depending on the sample and excitation wavelength. For the samples with constant hydrogen dilution, the fc measured by Raman increases along the growth direction. The hydrogen dilution profiling reverses this trend, which affirms that the hydrogen profiling controls the nanocrystalline structure evolution along the growth direction. The PL results show only one peak around 0.8-0.9 eV for the samples made with constant hydrogen dilution, but an additional peak at 1.4 eV appears in the sample made with the hydrogen dilution profiling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A24.2
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Shah, A. V., Meier, J., E. Vallat-Sauvain, Wyrsch, N., Kroll, U., Droz, C., and Graf, U., Solar Energy Materials & Solar Cells 78, 469 (2003).10.1016/S0927-0248(02)00448-8Google Scholar
2 Vetterl, O., Carius, R., Houben, L., Scholten, C., Luysberg, M., Lambertz, A., Finger, F., and Wagner, H., Mater. Res. Soc. Symp. Proc. 609, A15.2 (2000).10.1557/PROC-609-A15.2Google Scholar
3 Finger, F., Klein, S., Dylla, T., Neto, A. L. Baia, Vetterl, O., and Carius, R., Mater. Res. Soc. Symp. Proc. 715, 123 (2002).10.1557/PROC-715-A16.3Google Scholar
4 Yan, B., Yue, G., Yang, J., Guha, S., Williamson, D. L., Han, D., and Jiang, C.-S., Appl. Phys. Lett. 85, 1955 (2004).10.1063/1.1788877Google Scholar
5 Han, D. and Wang, K., Solar Energy Materials & Solar Cells 78, 181 (2003).10.1016/S0927-0248(02)00437-3Google Scholar
6 Han, D., Lorentzen, J. D., Weinberg-Wolf, J., McNeil, L.E., and Wang, Qi, J. Appl. Phys. 94, 2930 (2003).10.1063/1.1598298Google Scholar
7 Williamson, D. L., Mater. Res. Soc. Symp. Proc. 557, 251 (1999).10.1557/PROC-557-251Google Scholar
8 Vallat-Sauvain, E., Kroll, U., Meier, J., and Shah, A., J. Appl. Phys. 87, 3137 (2000).10.1063/1.372311Google Scholar
9 Houben, L., Luysberg, M., Hapke, P., Carius, R., Finger, F., Wanger, H., Phil. Mag. A 77, 1447 (1998).10.1080/01418619808214262Google Scholar
10 Veprek, S., Sarott, F. A., and Iqbal, Z., Phys. Rev. B 36, 3344 (1987).10.1103/PhysRevB.36.3344Google Scholar
11 Bustarret, E., Hachicha, M. A., and Brunel, M., Appl. Phys. Lett. 52, 1675 (1988).10.1063/1.99054Google Scholar
12 Carius, R., Merdzhanova, T., Finger, F., Mater. Res. Soc. Symp. Proc. 762, 321 (2003).10.1557/PROC-762-A4.2Google Scholar
13 Street, R. A., Hydrogenated Amorphous Silicon, (Cambridge University Press, England 1991), Chaps. 4. 6–8.10.1017/CBO9780511525247Google Scholar