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Structural and Electrical Properties of Titanium-Nickel Films Deposited Onto Silicon Substrates

Published online by Cambridge University Press:  26 July 2012

Kathleen R. Collen ,
Arthur B. Ellis ,
J. D. Busch  and
A. D. Johnson
Kathleen R. Collen
Affiliation:
University of Wisconsin-Madison, Department of of Chemistry, Madison, WI 53706
Arthur B. Ellis
Affiliation:
University of Wisconsin-Madison, Department of of Chemistry, Madison, WI 53706
J. D. Busch
Affiliation:
TiNi Alloy Co., Oakland, CA 94608
A. D. Johnson
Affiliation:
TiNi Alloy Co., Oakland, CA 94608
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Abstract

Thin films of the shape memory alloy NiTi have been sputter-deposited onto ptype silicon substrates. Films that are initially amorphous may be crystallized by vacuum annealing. The crystalline films exhibit the B2->B19′ phase change associated with the shape memory effect while remaining in contact with the silicon substrate. Transition temperatures were determined by resistance measurements and x-ray diffraction. The NiTi - Si contacts are diodes, as evidenced by their current-voltage characteristics; however, the effect of the phase change on the barrier height could not be determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 97
Copyright
Copyright © Materials Research Society 1992

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References

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