Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T09:20:58.240Z Has data issue: false hasContentIssue false

Structural and Electrical Properties of Hgx Zn1−x S Thin Films Prepared by Flash Evaporation Technique

Published online by Cambridge University Press:  10 February 2011

P. K. Swain
Affiliation:
Dept. of Electrical and Computer Engg.. New Jersey Institute of Technology, Newark, NJ 07102
H. K. Sehgal
Affiliation:
Dept. of Physics, Indian Institute of Technology, Hauz-Khas, New Delhi- 110 016, India
D. Misra
Affiliation:
Dept. of Electrical and Computer Engg.. New Jersey Institute of Technology, Newark, NJ 07102
Get access

Abstract

Electron diffraction investigations carried out on flash evaporated mercury zinc sulphide films with mercury concentration ( atomic percentage, x ) in the range 0.16 ≤ x ≤ 0.84 grown on freshly cleaved single crystal KCl substrates maintained at temperatures (Ts) between 65°C and 225°C indicate the films grow as single phase ternary alloy films with b.c.c. structure. Presence of a single phase alloy of the type HgxZn1−xS in the films is corroborated by a single absorption edge observed in the optical absorption measurements. The lattice parameter varies between 5.26Å and 4.52 Å as ‘x’ is varied between 0.16 and 0.84. The lattice parameter is observed to decrease slightly with increase of Ts for all compositions. The average grain size is observed to increase between 0.020 microns and 0.058 microns with increase of Ts in all films. Results of room temperature d.c. resistivity measurements show the resistivity to decrease with increase in mercury concentration ‘x’ in the films at a given Ts; ( for ‘fs=225°C, ρ(x=0.16) = 100.6 Ω-cm and ρ(x=0.84) = 10−0.4 Ω-cm ). The resistivity of films with a particular mercury concentration is, however, observed to increase with increase in the substrate temperature; ( for x=0.84 film, typical resistivity values are, ρ(Ts = 65 C) =10−2 Ω-cm and ρ(Ts = 225 C) = 10−0.4 Ω-cm). The observed resistive behavior of the films hints towards predominant grain boundary conduction in the films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gaw, I. C.A. and Kannewurf, C.R., Appl. Phys. Lett. 38(8), 634 (1981)Google Scholar
2. Willardson, R.K. and Beer, A.C. (eds.), Semiconductors and Semimetals, Vol.5, Academic Press, New York, 1970, p. 175.Google Scholar
3. Aven, M. and Prener, J.S. (eds.), Physics and Chemistry of Il–VI Compounds, North-Holland, Amsterdam, 1967, p. 769.Google Scholar
4. Zallen, R and Slade, M., Solid State Commun. 8, 1291 (1970)Google Scholar
5. Chopra, K.L., Thin Film Phenomena, Mc-Graw Hill, New York, 1969, Chap.IVGoogle Scholar
6. Jain, Mukesh and Sehgal, H.K, Thin Solid Films 111, 249 (1984)Google Scholar
7. Ostwald, W., Z. Physik Chem. 22, 289 (1987)Google Scholar