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Structural and Electrical Characterization of Undoped Poly-Si Oxides

Published online by Cambridge University Press:  28 February 2011

T. Sakamoto ,
H. Tokioka ,
S. Takanabe ,
T. Kubota ,
Y. Niwano ,
Y. Goto ,
H. Namizaki ,
O. Wada  and
H. Kurokawa
T. Sakamoto
Affiliation:
Materials & Electronic Devices Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, Japan
H. Tokioka
Affiliation:
Materials & Electronic Devices Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, Japan
S. Takanabe
Affiliation:
Materials & Electronic Devices Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, Japan
T. Kubota
Affiliation:
Materials & Electronic Devices Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, Japan
Y. Niwano
Affiliation:
Materials & Electronic Devices Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, Japan
Y. Goto
Affiliation:
Materials & Electronic Devices Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, Japan
H. Namizaki
Affiliation:
Materials & Electronic Devices Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, Japan
O. Wada
Affiliation:
Materials & Electronic Devices Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, Japan
H. Kurokawa
Affiliation:
Materials & Electronic Devices Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, Japan
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Abstract

We evaluated structural and electrical characteristics of undoped poly-Si oxide films. Poly-Si films made by solid phase crystallization at 600-900°C from undoped amorphous Si films were oxidized to form oxide layers of 140nm thickness. We observed protuberances on the surface of poly-Si layers after oxidation. Poly-Si oxide layers also generated protuberances above the protuberances of poly-Si films. The number of protuberances per unit area is larger in the case of high temperature crystallization. The measurement of current through the poly-Si oxide films shows that the conductivity of poly-Si oxide films depends on crystallization temperature of poly-Si films in the case of positive gate bias. When the gate is biased negatively, current through the poly-Si oxide films remained almost constant regardless of crystallization temperature. We find that poly-Si crystallized at lower temperatures offers poly-Si oxide films of lower leakage current in the case of electron injection from undoped poly-Si layers. The lower leakage current is due to highness of energy barrier for electron at undoped poly-Si/poly-Si oxide interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 933
Copyright
Copyright © Materials Research Society 1995

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References

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