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Structural and Electrical Characterization of B-Doped Microcrystalline Silicon thin Films

Published online by Cambridge University Press:  01 February 2011

R. Saleh  and
N. H. Nickel
R. Saleh
Affiliation:
Jurusan Fisika, Fakultas MIPA, Universitas Indonesia, 16424 Depok, Indonesia
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Kekulèstr.5, 12489 Berlin, Germany
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Abstract

In this paper we present the results for boron-doped microcrystalline silicon deposited at low temperature (230°C) by PECVD method. The structural and electrical properties are investigated as a function of boron concentrations using Raman, dark conductivity, hydrogen effusion and Hall effect measurements. The results show that the incorporation of boron induced an amorphization in the μc-Si:H films structure. A structural change due to boron incorporation is also accompanied by a change in hydrogen bonding environment. High conductive film of our boron-doped μc-Si:H films is attained at boron concentration 2000 ppm which consists nearly the same fraction of crystalline and amorphous phase (XC ~55 %).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A20.6
Copyright
Copyright © Materials Research Society 2002

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