Article contents
Strontium Bismuth Tantalate Based Ferroelectric Gate Field Effect Transistor with Yttrium Oxide as the Buffer Layer
Published online by Cambridge University Press: 10 February 2011
Abstract
We report the first demonstration of an enhancement mode n-channel metal -ferroelectric-semiconductor field effect transistor (MFISFET) realized directly on silicon with yttrium oxide as the buffer layer. The capacitance-voltage (C-V) characteristics of Metal Ferroelectric Insulator Silicon (MFIS) structures show hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. The memory window in the C-V characteristics was 2V for an applied voltage of ± 10V. The memory window did not show significant change due to decrease in rate of change of sweep voltage and temperature. The transmission electron microscopy (TEM) analysis confirms the formation of an amorphous oxide layer between silicon and yttrium oxide buffer layer.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1998
References
REFERENCES
- 2
- Cited by