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Strong Thickness Dependence of Photoelectronic Properties in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

L. Yang ,
I. Balberg ,
A. Catalano  and
M. Bennett
L. Yang
Affiliation:
Solarex Corporation, Thin Film Division 826 Newtown-Yardley Road, Newtown, PA 18940
I. Balberg
Affiliation:
Racah Institute of Physics, Hebrew University, Jerusalem, Israel
A. Catalano
Affiliation:
Solarex Corporation, Thin Film Division 826 Newtown-Yardley Road, Newtown, PA 18940
M. Bennett
Affiliation:
Solarex Corporation, Thin Film Division 826 Newtown-Yardley Road, Newtown, PA 18940
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Abstract

Many of the photoelectronic properties of a-Si:H, including photoconductivity and ambipolar diffusion length, were observed to deteriorate rapidly with decreasing film thickness. Calculations show that the thickness dependence can be attributed mainly to the effect of surface recombination. In fact, any surface recombination velocity above 100 cm/s will result in an equally good fit to the experimental data. We conclude that the intrinsic photoelectronic properties of bulk a-Si:H and other related materials can be measured only on thick samples (≥1μm) and by using uniformly absorbing light (at long wavelengths).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 243
Copyright
Copyright © Materials Research Society 1990

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References

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