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Stress-Recovery Transients in Ultra Thin Oxides on Silicon
Published online by Cambridge University Press: 10 February 2011
Abstract
The logarithmic current transients observed after electrical stress of 2 nm thick oxides on silicon show no sign of saturation for times up to 1 Ms. These results contradict the hypothesis that the tunneling distance from oxide defects to an interface is the main source of the dispersive relaxation in our case, and this might very well extend to other cases where such relaxation is observed in MOS devices with thicker oxides.
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- Copyright © Materials Research Society 1997
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