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Stress-Recovery Transients in Ultra Thin Oxides on Silicon

Published online by Cambridge University Press:  10 February 2011

Per Lundgren ,
Anders Jauhiainen  and
Lars-Åke Ragnarsson
Per Lundgren
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S - 412 96 Göteborg, Sweden, [email protected], [email protected], [email protected]
Anders Jauhiainen
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S - 412 96 Göteborg, Sweden, [email protected], [email protected], [email protected]
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Abstract

The logarithmic current transients observed after electrical stress of 2 nm thick oxides on silicon show no sign of saturation for times up to 1 Ms. These results contradict the hypothesis that the tunneling distance from oxide defects to an interface is the main source of the dispersive relaxation in our case, and this might very well extend to other cases where such relaxation is observed in MOS devices with thicker oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 197
Copyright
Copyright © Materials Research Society 1997

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References

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