Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T17:57:15.852Z Has data issue: false hasContentIssue false
  • English
  • Français

Stresses in Ion Assisted Deposited Oxide Thih Films

Published online by Cambridge University Press:  22 February 2011

M. Ghanashyam Krishna ,
Mansour Al Robaee ,
S. Kanakaraju ,
K. Narasimha Rao  and
S. Mohan
M. Ghanashyam Krishna
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
Mansour Al Robaee
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
S. Kanakaraju
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
K. Narasimha Rao
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
S. Mohan
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
Get access

Abstract

Thin films of Ceria, Titania and Ziroonia have been prepared using Ion Assisted Deposition(IAD). The energy of ions was varied between 0 and 1 keV and current densities up to 220 μA/cm were used. It was found that the stress behaviour is dependent on ion species, i.e. Argon or Oxygen, ion energy and current density and substrate temperature apart from the material. While oeria files showed tensile stresses under the influence of argon ion bombardment at ambient temperature, they showed a sharp transition from tensile to compressive stress with increase in substrate temperature. When bombarded with oxygen ions they showed a transition from tensile to compressive stress with increase in energy. The titania films deposited with oxygen ions, on the other hand showed purely tensile stresses. Zirconia films deposited with oxygen ions, however, showed a transition from tensile to compressive stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 929
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Roy, R. A. and Yee, D. S., in Handbook of Ion beam processing technology edited by. Cuomo, J.J. Rossnagel, S.M. and Kaufman, H.R., (Noyes , NJ., USA), 194, 1989.Google Scholar
2 Ghanashyan Krishna, M., Kanakaraju, S., Narasimha Rao, K. and Mohan, S., Mat.Sci.Eng.B, 21, 10 (1993).Google Scholar
3 Ghanashyam Krishna, M., Kanakaraju, S., and Mohan, S., Vacuum (in press).Google Scholar
4 Al-Robaee, M.S., Ghanashyam Krishna, M., Narasinha Rao, K. and Mohan, S., J.Vac.Sci.Technol.A, 9, 3048 (1991).Google Scholar
5 Martin, P.J. and Hetterfield, R.P., in Handbook of Ion beam processing technology edited by Cuono, J.J. Rossnagel, S.M. and Kaufman, H.R., (Hoyes , NJ., USA), 342, 1989.Google Scholar
6 Hindischmann, H., J.Vac.Sci.Technol.A, 9, 2431 (1991).Google Scholar