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Stress-Driven Formation of Self-Assembled InGaAs Islands on Sub-Micron Metal-Patterned Substrate

Published online by Cambridge University Press:  10 February 2011

Maeng Ho Son ,
S. K. Jung ,
Byung Don Min ,
Chan Kyung Hyun ,
Bum Ho Choi ,
Eun Kyu Kim ,
Yong Kim  and
Jong Soo Lim
Maeng Ho Son
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 13 1 Cheongryang, Seoul 130-650, Korea Department of Physics, Kyonggi University, Yiui-Dong, San 94-6, Paldal-gu, Suwon 442-760, Korea
S. K. Jung
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 13 1 Cheongryang, Seoul 130-650, Korea
Byung Don Min
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 13 1 Cheongryang, Seoul 130-650, Korea
Chan Kyung Hyun
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 13 1 Cheongryang, Seoul 130-650, Korea
Bum Ho Choi
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 13 1 Cheongryang, Seoul 130-650, Korea
Eun Kyu Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 13 1 Cheongryang, Seoul 130-650, Korea, [email protected]
Yong Kim
Affiliation:
Department of Physics, College of Natural Sciences, DongA University, Hadan-2-dong 840, Saha-gu, Pusan 604-714, Korea
Jong Soo Lim
Affiliation:
Department of Physics, Kyonggi University, Yiui-Dong, San 94-6, Paldal-gu, Suwon 442-760, Korea
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Abstract

A stress-driven formation of self-assembled InGaAs islands has been studied by the growth on GaAs (100) substrates with sub-micron platinum stripe pattern. Islands or quantum dots preferentially nucleate at the boundary of metal patterns. In addition, a quantum dot-free region near the boundary of the metal pattern is found. Those results are attributed to the stress between metal stripe and GaAs surface, which produces a laterally stressed region around the metal stripe. Adatoms on this region preferentially migrate toward the edge of metal stripes with maximum stress. This result may show a possible way for the interconnection between randomly distributed self-assembled quantum dots and metal stripes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 171
Copyright
Copyright © Materials Research Society 2000

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