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Stress That Counteracts Electromigration: Threshold Versus Kinetic Approach

Published online by Cambridge University Press:  21 February 2011

E. Glickman ,
N. Osipov  and
A. Ivanov
E. Glickman
Affiliation:
Graduate School of Applied Science, Hebrew University, Jerusalem 91904, Israel
N. Osipov
Affiliation:
Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka 142432, Moscow District, Russia
A. Ivanov
Affiliation:
Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka 142432, Moscow District, Russia
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Abstract

The paper analyzes electromigration (EM) conditions and material properties that determine the maximum EM induced stress, σa, and stress gradient, ∇σ, which counteract EM flow in interconnects.

The first systematic data on the drift velocity vs. stripe length, L, current density, j, and temperature are presented for Al lines. In contrast to the conventional approach to the Blech problem with σa taken to be a material constant (“yield strength”), the observations suggest that σa increases with j. The stress adjustment is shown to result from the imperative coupling of the net flux of material directed to the downwind end of the stripe with the flux of plastic flow (creep) responsible for stress relaxation. The effect of parameters of the constitutive equation assumed to describe the plastic flow kinetics, namely that of strain rate exponent, threshold stress, and creep, effective viscosity, on the stress cya is considered. To account for the creep viscosity, η, obtained unpassivated aluminum stripes from EM experiments, a model for the attachment-controlled Coble creep is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 477
Copyright
Copyright © Materials Research Society 1995

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References

1. Blech, I.A., J.Appl.Phys. 47, 1203 (1976); 48, 2648 (1977).Google Scholar
2. Schreiber, G.U., Thin Solid Films. 175, 29 (1989); Solid State Electronics. 24, 1135 (1985); 29, 617 (1986); 29, 893 (1986).Google Scholar
3. Tompson, C.V. and Lloyd, J.R., MRS Bulletin. 18, 19 (1993).Google Scholar
4. Glickman, E., Osipov, N. and Ivanov, E., Defect and Diffusion Forum. 66–69, 1128 (1989); Sov. Microelectronics. 19, 132 (1990).Google Scholar
5. Glickman, E. and Vilenkin, A., in: Proc. 5th Intern. Conf. “Quality of Electronic Components: Failure Prevention, Detection and Analysis”, Bordeaux-France. 36 (1991).Google Scholar
6. Klinger, L., Glickman, E., Katsman, A., Mater. Sci. Eng. B23, 15 (1994).Google Scholar
7. Glickman, E., Klinger, L., Katsman, A. and Levin, L., in: Materials Reliability in Microelectronics IV, ed. by Børgesen, P. et al. (Mater: Res. Soc. Symp. Proc.), 339 (1994).Google Scholar
8. Frost, H.J. and Ashby, M.F., Deformation-Mechanisms Maps, Pergamon Press. Oxford, (1982).Google Scholar
9. Cadek, J., Creep in Metallic Materials, Academia, Prague, (1988).Google Scholar
10. Hirth, J.P. and Lothe, J., Theory of Dislocations, McGraw-Hill, New-York, 1970.Google Scholar
11. Gladkikh, A., Glickman, E., Karpovski, M., Palevski, A., Lereah, Y., Submitted to J.Appl.Phys.Lett. (1994).Google Scholar
12. Ross, C.A., Drewry, J.S., Somekh, R.E. and Evetts, J.E., J. Appl. Phys. 16, 2349 (1989).Google Scholar