Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-06T11:47:04.218Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress Relaxation and Electromigration Kinetics in Short Metal Lines: Transition to Creep Controlled Regime

Published online by Cambridge University Press:  22 February 2011

E. Glickman ,
L. Klinger ,
A. Katsman  and
L. Levin
E. Glickman
Affiliation:
Graduate School of Applied Science, Hebrew University of Jerusalem, Jerusalem 91904, Israel
L. Klinger
Affiliation:
Department of Materials Engineering, Technion, Haifa 32000, Israel
A. Katsman
Affiliation:
Department of Materials Engineering, Technion, Haifa 32000, Israel
L. Levin
Affiliation:
Department of Materials Engineering, Technion, Haifa 32000, Israel
Get access

Abstract

An analysis of transition from the electrotransport controlled to the creep controlled electromigration (EM) is made for the Blech test geometry. The analysis rests on the approach developed by the authors with relaxation of electromigration induced stress by diffusional creep and non-linear stress distribution along the line. The derived solution confirms the idea of Glickman and Vilenkin that for high current density as the length of the line decreases the transition from the electrotransport controlled to the creep controlled electromigration kinetics must occur. The value of introduced parameter r that relates electromigration behavior to the creep viscosity is estimated by the comparison with experimental observations for aluminum stripes and discussed in terms of the Coble creep mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 361
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Blech, I.A., J.Appl. Phys., 47, 1203 (1976)Google Scholar
2. Blech, I.A. and Herring, C., Appl.Phys.Lettl, 29, 131 (1976).Google Scholar
3. Blech, I.A., Kinsbron, E., Thin Solid Films, 25, 327, (1975).Google Scholar
4. Blech, I.A. and Tai, K.L., Appl.Phys. Lett., 30, 387, (1977).Google Scholar
5. Kinsbron, E., Blech, I.A., Komem, Y., Thin Solid Films, 46, 139, (1977).Google Scholar
6. Korhonen, M.A., Borgesen, P., Li, C.-Y., MRS Bulletin, 17, 61 (1992).Google Scholar
7. Kirchheim, R., Acta Metal. Mater., 40, 309 (1992)Google Scholar
8. Glickman, E., Vilenkin, A., Proc. 5th Intern. Conf Quality. Electr. Comp., Bordeau-France, 36 (1991).Google Scholar
9. Glickman, E., Osipov, N.A., Ivanov, E.D., in “Diffusion in Metals and Alloys” (DIMETA-88), edited by Kedves, F.J. and Beke, D.L., Defect and Diffusion Forum, 66–69, 1128 (1989).Google Scholar
10. Glickman, E., Ivanov, E. and Osipov, N., Sov. Microelectronics, 19, 132 (1990)Google Scholar
11. Klinger, L., Glickman, E., Katsman, A., Levin, Mater.Sci.Eng., B23, 15, (1994)Google Scholar
12. Glickman, E., Osipov, N.A., Ivanov, E.D., to be published.Google Scholar
13. Thompson, C.V. and Lloyd, J.R., MRS Bulletin, 18, 19 (1993)Google Scholar
14. Frost, H.J. and Ashby, M.F., Deformation Mechanism Maps, Pergamon Press, Oxford, (1984)Google Scholar