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Stress in Thin Layers Applied by Substrate Bending; Calibration and Potentialities

Published online by Cambridge University Press:  15 February 2011

J.A. Chroboczek ,
M. Stöhr  and
T.E. Whall
J.A. Chroboczek
Affiliation:
Centre National d'Etudes Télécommunications, 38243 Meylan, France
M. Stöhr
Affiliation:
Service National des Champs Intenses, CNRS, 38240 Grenoble, France Present address: Wirtschafts und Infrastruktur Planung, 8000 Munich 70, Germany.
T.E. Whall
Affiliation:
Physics Department, University of Warwick, Coventry CV47AL, UK.
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Abstract

Uniaxial stresses up to 0.3GPa, both compressive and tensile, can be generated in thin epitaxial layers by substrate bending. We demonstrate the feasibility of the method and calibrate the stress, measuring piezoresistance at temperatures below the impurity freeze-out, on lightly B-doped silicon MBE layers, using the known expression for a surface stress in a bent cantilever beam. The ground state energy displacement of B in Si thus obtained can vary by ±5meV, suggesting potential applications of the technique in tunable devices, involving doped semiconductors or heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 91
Copyright
Copyright © Materials Research Society 1993

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References

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