Hostname: page-component-669899f699-7xsfk Total loading time: 0 Render date: 2025-04-25T19:09:47.860Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress Hysteresis and Thermal-Mechanical Behavior of PECVD Silicon Nitride and Ebeam Aluminum Films for Microbolometer Applications

Published online by Cambridge University Press:  01 February 2011

Shusen Huang  and
Xin Zhang
Shusen Huang
Affiliation:
Laboratory for Microsystems Technology, Department of Manufacturing Engineering, Boston University, Boston, Massachusetts 02215, USA.
Xin Zhang
Affiliation:
Laboratory for Microsystems Technology, Department of Manufacturing Engineering, Boston University, Boston, Massachusetts 02215, USA.
Get access

Abstract

Uncooled cantilever-based microbolometer arrays received more attention recently due to high sensitivity and low cost. The central idea is built on the deflection of a bilayer SiNx/Al material upon the temperature change. The thermal-mechanical behavior of the bilayer is significant for the performance of the microbolometers. In this paper, we perform thermal cyclings to aluminum and SiNx films. The CTEs and the stress evolutions were measured using a curvature measurement system. The curvature profile of a SiNx/Al/Si component was predicted using an extension of Stoney's formula, well agreeing with the experimental results. This work demonstrates fundamental mechanics issues in bilayer SiNx/Al components, which have a great potential for the use in uncooled microbolometer applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U10.11
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Zhao, Y., Choi, J., Horowitz, R., Majumdar, A., Kitching, J., and Norton, P., Proc. SPIE. 4820, 164 (2003).Google Scholar
2. Datskos, P.G., Lavrik, N.V., and Rajicm, S., Rev. Sci. Instrum. 75, 1134–1148 (2004).Google Scholar
3. Stoney, G. G., Proc. R. Soc. London, Ser. A 82, 172 (1909).Google Scholar
4. Nix, W. D., Metall. Trans. A 20A, 2217 (1989).Google Scholar
5. The material properties are from the online materials database at http://www.memsnet.org/material/. Google Scholar
6. Zhang, X., Zhang, T.Y, Wong, M., and Zohar, Y., J. Microelectromech. S. 7, 356 (1998).Google Scholar
7. Kim, J. S., Paik, K. W., and Oh, S. H., J Appl. Phys. 86, 5474 (1999).Google Scholar