Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T09:29:08.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress Gradients in SIO2 Thin Films Prepared by Thermal Oxidation and Subjected to Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

C.H. Bjorkman ,
J.T. Fitch  and
G. Lucovsky
C.H. Bjorkman
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
J.T. Fitch
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
Get access

Abstract

We have studied stress gradients in thermally grown SiO2 thin films and relaxation of the stress by rapid thermal annealing. These properties were examined by incrementally etching back the SiO2 films and performing infrared spectroscopy and beam-bending measurements at each thickness. The thickness-averaged values measured were then deconvoluted to obtain stress values for thin layers of the SiO2 films. We observed steep stress gradients close to the Si/SiO2 interface for wet oxides which were similar to those previously studied in dry oxides. The stress gradients were steeper for films grown or annealed at high temperatures. In addition, we have been able to show that thin films (= 200 Å) relax more freely than thicker films (= 1000 Å), in which oxide close to the interface is prevented from relaxing by the oxide on top of it.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 197
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lucovsky, G., Mantini, M.J., Srivastava, J.K., and Irene, E.A., J. Vac. Sci. Technol. B5, 530 1987.Google Scholar
2. Fitch, J.T. and Lucovsky, G., MRS Symup. Proc. 92, 89 1987; MRS Symup. Proc. 105, 151 (1988); AIP Conf. Proc. 167, AVS Sub-Series, ed. by G.W. Rubloff (1988) (in press).Google Scholar
3. Lucovsky, G., Fitch, J.T., Kobeda, E., and Irene, E.A., J. Electrochem. Soc., (1988) (in press).Google Scholar
4. Fitch, J.T., Kobeda, E., Lucovsky, G., and Irene, E.A., J. Vac. Sci. Technol. B (1989) (in press).Google Scholar
5. Fitch, J.T., Bjorkman, C.H., Sumakeris, J.J., and Lucovsky, G., MRS Symup. Proc. 130, (1988) (in press).Google Scholar
6. Ghandhi, S.K., VLSI Fabrication Principles (John Wiley & Sons, Inc., New York, 1983), p. 522.Google Scholar
7. Kobeda, E. and Irene, E.A., J. Vac. Sci. Technol. B4, 720 1986; J. Vac. Sci. Technol. B5, 15 (1987); J. Vac. Sci. Technol. B6, 574 (1988).Google Scholar
8. Galeener, F.L., Phys. Re'v. B19, 4292 1979; F.L. Galeener and P.B. Sen, Phys. Rev. B17, 1928 (1978).Google Scholar
9. Mozzi, R.L. and Warren, B.E., J. Appl. Cryst. 2, 164 1969.Google Scholar
10. Jaccodine, R.J. and Schlegel, W.A., J. Appl. Phys. 37, 2429 1966.Google Scholar